PSMN1R3-30YL,115 NXP USA Inc. MOSFET N-CH 30V 100A LFPAK N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK, Power-SO8

Part Nnumber
PSMN1R3-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK, Power-SO8
Producer
NXP USA Inc.
Basic price
0,86 EUR

The product with part number PSMN1R3-30YL,115 (MOSFET N-CH 30V 100A LFPAK N-Channel 30V 100A (Tc) 121W (Tc) Surface Mount LFPAK, Power-SO8) is from company NXP USA Inc. and distributed with basic unit price 0,86 EUR. Minimal order quantity is 1 pc.


Categories Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Manufacturer NXP USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 6227pF @ 12V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 121W (Tc) Rds On (Max) @ Id, Vgs 1.3 mOhm @ 15A, 10V Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK, Power-SO8 Package / Case SOT-1023, 4-LFPAK


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